SPN01N60C3

Obsolete

Infineon Technologies

MOSFET N-CH 650V 300MA SOT223-4

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 300MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	SPN01N60C3

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Infineon Technologies SPN01N60C3	MOSFET (Metal Oxide)	1.8 W	20 V	Surface Mount	300 mA	6 Ohm	TO-261-4 TO-261AA	PG-SOT223-4	N-Channel	3.7 V	100 pF	-55 °C	150 °C	5 nC	10 V	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 300mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources