CUS05(TE85L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A US-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 20V 1A US-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CUS05(TE85L,Q,M)

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-323, SC-76
Speed	200 mA, 500 ns
Supplier Device Package	US-FLAT (1.25x2.5)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	370 mV

Part	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage CUS05(TE85L,Q,M)	US-FLAT (1.25x2.5)	1 A	20 V	200 mA 500 ns	1 mA	SC-76 SOD-323	40 pF	125 °C	-40 °C	Schottky	Surface Mount	370 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 20 V 1A Surface Mount US-FLAT (1.25x2.5)

Technical documentation and resources

No documents available