AOT292L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 105A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 105A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT292L

Current - Continuous Drain (Id) @ 25°C	14.5 A, 105 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Input Capacitance (Ciss) (Max) @ Vds	6775 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.1 W, 300 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Technology
Alpha & Omega Semiconductor Inc. AOT292L	6 V 10 V	TO-220	126 nC	6775 pF	3.4 V	20 V	Through Hole	14.5 A 105 A	TO-220-3	N-Channel	2.1 W 300 W	4.5 mOhm	-55 °C	175 ░C	100 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.61