HMC413QS16G
ObsoleteIC AMP CELL 1.6GHZ-2.2GHZ 16QSOP
HMC413QS16G
ObsoleteIC AMP CELL 1.6GHZ-2.2GHZ 16QSOP
Description
General part information
HMC413 Series
The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.ApplicationsCellular / PCS / 3GPortable & InfrastructureWireless Local Loop
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC413QS16G |
|---|---|
| Current - Supply | 220 mA |
| Frequency (Max) | 2.2 GHz |
| Frequency (Min) | 1.6 GHz |
| Gain | 23 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 5.5 dB |
| P1dB | 27 dBm |
| Package Features | Exposed Pad |
| Package Length | 0.154 in |
| Package Name | 16-QSOP-EP, 16-SSOP |
| Package Width | 3.9 mm |
| RF Type | Cellular, PCS |
| Voltage - Supply (Maximum) | 5 V |
| Voltage - Supply (Minimum) | 2.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
