Specification	SI1058X-T1-E3

Current - Continuous Drain (Id) (Ta)	1.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	5.9 nC
Input Capacitance (Ciss) (Max)	380 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-563, SOT-666
Package Name	SC-89 (SOT-563F)
Power Dissipation (Max)	236 mW
Rds On (Max)	91 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.55 V

SI1058 Series

Part	Gate Charge (Max)	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Package Name	Vgs(th) (Max)	Rds On (Max)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI1058X-T1-E3	5.9 nC	SOT-563 SOT-666	236 mW	380 pF	-55 °C	150 °C	20 V	Surface Mount	N-Channel	SC-89 (SOT-563F)	1.55 V	91 mOhm	MOSFET (Metal Oxide)	2.5 V	4.5 V	12 V	1.3 A
Vishay Dale SI1058X-T1-GE3	5.9 nC	SOT-563 SOT-666	236 mW	380 pF	-55 °C	150 °C	20 V	Surface Mount	N-Channel	SC-89 (SOT-563F)	1.55 V	91 mOhm	MOSFET (Metal Oxide)	2.5 V	4.5 V	12 V	1.3 A

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