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IPD78CN10NGATMA1 - TO252-3

IPD78CN10NGATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 78 MOHM;

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IPD78CN10NGATMA1 - TO252-3

IPD78CN10NGATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 100 V ; DPAK TO-252 PACKAGE; 78 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD78CN10NGATMA1
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]716 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)31 W
Rds On (Max) @ Id, Vgs78 mOhm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.15
10$ 0.72
100$ 0.47
500$ 0.37
1000$ 0.33
Digi-Reel® 1$ 1.15
10$ 0.72
100$ 0.47
500$ 0.37
1000$ 0.33
Tape & Reel (TR) 2500$ 0.30
5000$ 0.27
7500$ 0.26
12500$ 0.25
NewarkEach (Supplied on Full Reel) 2500$ 0.28
5000$ 0.27
10000$ 0.27
15000$ 0.26

Description

General part information

IPD78CN10 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources