Description
General part information
IKW40N120 Series
The IKW40N120T2 is a Low Loss IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel emitter controlled diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Technical Specifications
Parameters and characteristics for this part
| Specification | IKW40N120T2FKSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 75 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 192 nC |
| IGBT Type | Trench |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-1 |
| Power - Max | 480 VA |
| Reverse Recovery Time (trr) | 258 ns |
| Switching Energy | 5.25 mJ |
| Td (off) @ 25°C | 314 ns |
| Td (on) @ 25°C | 33 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 12 Ohm |
| Test Condition Voltage | 600 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.2 V |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Pricing
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