Specification	SI4848DY-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.7 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SI4848 Series

Part	Gate Charge (Max)	Rds On (Max)	Power Dissipation (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Length	Package Width
Vishay Dale SI4848DY-T1-GE3	21 nC	85 mOhm	1.5 W	8-SOIC	-55 °C	150 °C	150 V	N-Channel	2 V	Surface Mount	MOSFET (Metal Oxide)	2.7 A	20 V	6 V	10 V	0.154 in	3.9 mm

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