IXFK32N50Q

Obsolete

LITTELFUSE

MOSFET N-CH 500V 32A TO264AA

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IXFK32N50Q

Obsolete

LITTELFUSE

MOSFET N-CH 500V 32A TO264AA

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFK32 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK32N50Q

Current - Continuous Drain (Id) (Tc)	32 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	3950 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264AA (IXFK)
Power Dissipation (Max)	416 W
Rds On (Max)	160 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXFK32 Series

DiscMSFT NChHiPerFET-Q3 Class TO-264(3)

Part	Vgs(th) (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Package Name	Power Dissipation (Max)
LITTELFUSE IXFK32N100P	6.5 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	320 mOhm	-55 °C	150 °C	32 A	225 nC	30 V	Through Hole	14200 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	960 W
LITTELFUSE IXFK32N100Q3	6.5 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	320 mOhm	-55 °C	150 °C	32 A	195 nC	30 V	Through Hole	9940 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	1250 W
LITTELFUSE IXFK32N60	4.5 V	N-Channel	600 V	MOSFET (Metal Oxide)	10 V	250 mOhm	-55 °C	150 °C	32 A	325 nC	20 V	Through Hole	9000 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	500 W
LITTELFUSE IXFK32N100Q3	6.5 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	320 mOhm	-55 °C	150 °C	32 A	195 nC	30 V	Through Hole	9940 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	1250 W
LITTELFUSE IXFK32N100X	6 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	220 mOhm	-55 °C	150 °C	32 A	130 nC	30 V	Through Hole	4075 pF	TO-264-3 TO-264AA	TO-264	890 W
LITTELFUSE IXFK32N100P	6.5 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	320 mOhm	-55 °C	150 °C	32 A	225 nC	30 V	Through Hole	14200 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	960 W
LITTELFUSE IXFK32N80P	5 V	N-Channel	800 V	MOSFET (Metal Oxide)	10 V	270 mOhm	-55 °C	150 °C	32 A	150 nC	30 V	Through Hole	8800 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	830 W
LITTELFUSE IXFK32N100X	6 V	N-Channel	1000 V	MOSFET (Metal Oxide)	10 V	220 mOhm	-55 °C	150 °C	32 A	130 nC	30 V	Through Hole	4075 pF	TO-264-3 TO-264AA	TO-264	890 W
LITTELFUSE IXFK32N50Q	4.5 V	N-Channel	500 V	MOSFET (Metal Oxide)	10 V	160 mOhm	-55 °C	150 °C	32 A	150 nC	20 V	Through Hole	3950 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	416 W
LITTELFUSE IXFK32N80Q3	6.5 V	N-Channel	800 V	MOSFET (Metal Oxide)	10 V	270 mOhm	-55 °C	150 °C	32 A	140 nC	30 V	Through Hole	6940 pF	TO-264-3 TO-264AA	TO-264AA (IXFK)	1000 W

Pricing

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