Specification	SI5414DC-T1-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power Dissipation (Max)	2.5 W, 6.3 W
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI5414 Series

Part	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	FET Type	Rds On (Max)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Vgs(th) (Max)
Vishay Dale SI5414DC-T1-GE3	41 nC	20 V	MOSFET (Metal Oxide)	Surface Mount	N-Channel	17 mOhm	1206-8 ChipFET™	12 V	6 A	1500 pF	2.5 W 6.3 W	2.5 V	4.5 V	-55 °C	150 °C	8-SMD Flat Leads	1.5 V

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