Specification	IPF016N10NF2SATMA1

Current - Continuous Drain (Id) (Tc)	274 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	241 nC
Input Capacitance (Ciss) (Max)	11000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Leads	7 Leads
Package Name	PG-TO263-7-14, D2PAK
Power Dissipation (Max)	300 W
Rds On (Max)	1.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.8 V

IPF016N Series

Part	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Input Capacitance (Ciss) (Max)	FET Type	Package Name	Vgs(th) (Max)	Package Leads	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)
INFINEON IPF016N10NF2SATMA1	MOSFET (Metal Oxide)	300 W	-55 °C	175 °C	1.6 mOhm	274 A	20 V	11000 pF	N-Channel	D2PAK PG-TO263-7-14	3.8 V	7 Leads	241 nC	6 V	10 V	Surface Mount	100 V

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