Specification	IPD65R650CEAUMA1

Current - Continuous Drain (Id) (Tc)	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	23 nC
Input Capacitance (Ciss) (Max)	440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	86 W
Rds On (Max)	650 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPD65R650 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Technology	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)
INFINEON IPD65R650CEAUMA1	7 A	20 V	MOSFET (Metal Oxide)	PG-TO252-3	Surface Mount	650 V	N-Channel	86 W	23 nC	-40 °C	150 °C	440 pF	650 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	3.5 V

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