TPH6400ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.064 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
TPH6400ENH,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 200 V, 0.064 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Description
General part information
TPH6400ENH Series
12V - 300V MOSFETs, N-ch MOSFET, 200 V, 0.064 Ω@10V, SOP Advance, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH6400ENH,L1Q |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 11.2 nC |
| Input Capacitance (Ciss) (Max) | 1100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 1.6 W, 57 W |
| Rds On (Max) | 64 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET Self-Turn-On Phenomenon
Electrical Characteristics: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
MOSFET SPICE model grade
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Avalanche energy calculation
Hints and Tips for Thermal Design part3
Motor Control (Vacuum Cleaners)
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
TPH6400ENH Data sheet/Japanese
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Derating of the MOSFET Safe Operating Area
Simplified CFD Model Application Note
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
TPH6400ENH Data sheet/English
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
RC Snubbers for Step-Down Converters
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes