AOW11S65

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO262

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Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 11A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW11S65

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Input Capacitance (Ciss) (Max) @ Vds	646 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Technology
Alpha & Omega Semiconductor Inc. AOW11S65	30 V	650 V	11 A	13.2 nC	10 V	Through Hole	4 V	646 pF	N-Channel	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	TO-262	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$