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IGW75N60TFKSA1

IGW75N60TFKSA1

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INFINEON

THE IGW75N60T IS A 600 V, 75 A IGBT DISCRETE IN TO-247 PACKAGE

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IGW75N60TFKSA1

IGW75N60TFKSA1

Active
INFINEON

THE IGW75N60T IS A 600 V, 75 A IGBT DISCRETE IN TO-247 PACKAGE

Find alt

Description

General part information

IGW75N60 Series

Hard-switching 600 V, 75 A singleTRENCHSTOP™ IGBT3in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Technical Specifications

Parameters and characteristics for this part

SpecificationIGW75N60TFKSA1
Current - Collector (Ic) (Max)150 A
Current - Collector Pulsed (Icm)225 A
Gate Charge470 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NamePG-TO247-3-1
Power - Max428 W
Switching Energy4.5 mJ
Td (off) @ 25°C330 ns
Td (on) @ 25°C33 ns
Test Condition Current75 A
Test Condition Resistance5 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2 V
Voltage - Collector Emitter Breakdown (Max)600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

Technical documentation and resources

    IGW75N60TFKSA1 | INFINEON | Zenode.ai