SUP70090E-GE3

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Vishay Siliconix

MOSFET N-CH 100V 50A TO220AB

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Vishay Siliconix

MOSFET N-CH 100V 50A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP70090E-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 100V 50A TO220AB

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Vishay Siliconix SUP70090E-GE3	100 V	50 A	MOSFET (Metal Oxide)	50 nC	TO-220-3	20 V	125 W	10 V	7.5 V	Through Hole	8.9 mOhm	TO-220AB	-55 °C	175 ░C	4 V	N-Channel	1950 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 50A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources