IDW15S120FKSA1

Obsolete

Infineon Technologies

DIODE SIL CARB 1.2KV 15A TO247-3

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Obsolete

Infineon Technologies

DIODE SIL CARB 1.2KV 15A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW15S120FKSA1

Capacitance @ Vr, F	870 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	305 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Package / Case	Mounting Type	Supplier Device Package	Technology	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F
Infineon Technologies IDW15S120FKSA1	TO-247-3	Through Hole	PG-TO247-3	SiC (Silicon Carbide) Schottky	No Recovery Time	175 ░C	-55 C	1.8 V	0 ns	15 A	1.2 kV	305 µA	870 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 15A Through Hole PG-TO247-3

Technical documentation and resources

No documents available