SI7459DP-T1-GE3

Obsolete

MOSFET P-CH 30V 13A PPAK SO-8

Obsolete

MOSFET P-CH 30V 13A PPAK SO-8

Description

General part information

P-Channel 30 V 13A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Parameters and characteristics for this part

Specification	SI7459DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	170 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	6.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3 V

Part	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Power Dissipation (Max)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)
Vishay Dale SI7459DP-T1-GE3	P-Channel	Surface Mount	30 V	170 nC	3 V	13 A	MOSFET (Metal Oxide)	25 V	-55 °C	150 °C	PowerPAK® SO-8	1.9 W	PowerPAK® SO-8	10 V	6.8 mOhm
Vishay Dale SI7459DP-T1-E3	P-Channel	Surface Mount	30 V	170 nC	3 V	13 A	MOSFET (Metal Oxide)	25 V	-55 °C	150 °C	PowerPAK® SO-8	1.9 W	PowerPAK® SO-8	10 V	6.8 mOhm

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