Specification	IRF9Z34NSTRLPBF

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	35 nC
Input Capacitance (Ciss) (Max)	620 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	D2PAK
Power Dissipation (Max)	3.8 W, 68 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9Z34 Series

Part	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Max)	Package Name	Technology	FET Type
INFINEON IRF9Z34NSTRRPBF	55 V	100 mOhm	-55 °C	175 °C	Surface Mount	620 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	10 V	19 A	3.8 W 68 W	20 V	35 nC	D2PAK	MOSFET (Metal Oxide)	P-Channel
INFINEON IRF9Z34NPBF	55 V	100 mOhm	-55 °C	175 °C	Through Hole	620 pF	TO-220-3	4 V	10 V	19 A	68 W	20 V	35 nC	TO-220AB	MOSFET (Metal Oxide)	P-Channel
INFINEON IRF9Z34NSTRLPBF	55 V	100 mOhm	-55 °C	175 °C	Surface Mount	620 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	10 V	19 A	3.8 W 68 W	20 V	35 nC	D2PAK	MOSFET (Metal Oxide)	P-Channel

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