PSMN0R9-25YLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 0.85 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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PSMN0R9-25YLDX

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Nexperia USA Inc.

N-CHANNEL 25 V, 0.85 MΩ, 300 A LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWERS3 TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN0R9 Series

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current, particularly suited to battery powered appliance applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN0R9-25YLDX

Current - Continuous Drain (Id) (Tc)	300 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	89.8 nC
Input Capacitance (Ciss) (Max)	6721 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	238 W
Rds On (Max)	0.85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.2 V

PSMN0R9 Series

N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595

Part	Package Name	Power Dissipation (Max)	Rds On (Max)	Mounting Type	Vgs (Max)	Gate Charge (Max)	FET Type	Vgs(th) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Nexperia USA Inc. PSMN0R9-25YLC,115	LFPAK56 Power-SO8	272 W	0.99 mOhm	Surface Mount	20 V	110 nC	N-Channel	1.95 V	10 V	4.5 V	6775 pF	SC-100 SOT-669	MOSFET (Metal Oxide)	25 V	-55 °C	175 °C	100 A
Nexperia USA Inc. PSMN0R9-30ULDX	LFPAK56 Power-SO8	227 W	0.87 mOhm	Surface Mount	20 V	109 nC	N-Channel	2.2 V	10 V	4.5 V	7668 pF	4-LFPAK SOT-1023	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	300 A
Nexperia USA Inc. PSMN0R9-25YLDX	LFPAK56 Power-SO8	238 W	0.85 mOhm	Surface Mount	20 V	89.8 nC	N-Channel	2.2 V	10 V	4.5 V	6721 pF	SC-100 SOT-669	MOSFET (Metal Oxide)	25 V	-55 °C	175 °C	300 A