
CUS15S40,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 1.5 A SCHOTTKY BARRIER DIODE, SOD-323(USC)

CUS15S40,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 1.5 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
Description
General part information
CUS15S40 Series
Diodes, 1.5 A Schottky Barrier Diode, SOD-323(USC)
Technical Specifications
Parameters and characteristics for this part
| Specification | CUS15S40,H3F |
|---|---|
| Capacitance | 170 pF |
| Current - Average Rectified (Io) | 1.5 A |
| Current - Reverse Leakage | 200 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 125 °C |
| Package / Case | SC-76, SOD-323 |
| Package Name | USC |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) | 450 mV |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
CUS15S40,H3F | Datasheet
Mini catalog Toshiba's circuit protection solutions and switch solutions
CUS15S40 Data sheet/Japanese
Selecting a Schottky Barrier Diode for Voltage Boost Circuits
Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
Basics of Diodes (Types and Overview of Diodes)
Thermal Design for Schottky Barrier Diodes (SBDs) in the US2H Package
Selection Guide Small Signal 2025 Rev1.0
Basics of Diodes (Power Losses and Thermal Design)
Mini catalog Introduction of Toshiba diode lineup for Industries