Specification	XPQR8308QB,LXHQ

Current - Continuous Drain (Id) (Ta)	350 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	305 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	24700 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Package Name	L-TOGL™
Power Dissipation (Max)	750 W
Qualification	AEC-Q101
Rds On (Max)	0.83 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

XPQR8308QB Series

12V - 300V MOSFETs, N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Vgs(th) (Max)	Package Name	Operating Temperature	Package / Case	Technology	Input Capacitance (Ciss) (Max)	Mounting Type	Grade	Qualification	FET Type	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Rds On (Max)
Toshiba Semiconductor and Storage XPQR8308QB,LXHQ	80 V	20 V	350 A	750 W	3.5 V	L-TOGL™	175 °C	8-PowerBSFN	MOSFET (Metal Oxide)	24700 pF	Surface Mount	Automotive	AEC-Q101	N-Channel	305 nC	6 V	10 V	0.83 mOhm

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