
VS-123NQ100PBF
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 120A D-67

VS-123NQ100PBF
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 120A D-67
Description
General part information
123NQ100 Series
Diode 100 V 120A Chassis Mount D-67 HALF-PAK
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-123NQ100PBF |
|---|---|
| Capacitance | 2650 pF |
| Current - Average Rectified (Io) | 120 A |
| Current - Reverse Leakage | 3 mA |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D-67 HALF-PAK |
| Package Name | D-67 HALF-PAK |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 910 mV |
Pricing
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CAD
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Documents
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