Specification	IRF7853TRPBF

Current - Continuous Drain (Id) (Ta)	8.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	1640 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SO, 8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.9 V

IRF7853 Series

Part	Rds On (Max)	Power Dissipation (Max)	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Mounting Type
INFINEON IRF7853TRPBF	18 mOhm	2.5 W	MOSFET (Metal Oxide)	39 nC	100 V	8-SO 8-SOIC	10 V	0.154 in	3.9 mm	1640 pF	-55 °C	150 °C	20 V	N-Channel	8.3 A	4.9 V	Surface Mount

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