Specification	IRF9630STRLPBF

Current - Continuous Drain (Id) (Tc)	6.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	29 nC
Input Capacitance (Ciss) (Max)	700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	3 W, 74 W
Rds On (Max)	800 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRF9630 Series

Part	FET Type	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package Name	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Vgs (Max)	Vgs(th) (Max)	Mounting Type
Vishay Dale IRF9630S	P-Channel	3 W 74 W	29 nC	-55 °C	150 °C	10 V	6.5 A	TO-263 (D2PAK)	700 pF	MOSFET (Metal Oxide)	200 V	800 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	4 V	Surface Mount
Vishay Dale IRF9630	P-Channel	74 W	29 nC	-55 °C	150 °C	10 V	6.5 A	TO-220AB	700 pF	MOSFET (Metal Oxide)	200 V	800 mOhm	TO-220-3	20 V	4 V	Through Hole
Vishay Dale IRF9630STRR	P-Channel	3 W 74 W	29 nC	-55 °C	150 °C	10 V	6.5 A	TO-263 (D2PAK)	700 pF	MOSFET (Metal Oxide)	200 V	800 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	4 V	Surface Mount
Vishay Dale IRF9630STRLPBF	P-Channel	3 W 74 W	29 nC	-55 °C	150 °C	10 V	6.5 A	TO-263 (D2PAK)	700 pF	MOSFET (Metal Oxide)	200 V	800 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	4 V	Surface Mount

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