TK10V60W,LVQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.38 Ω@10V, DFN 8 X 8, DTMOSⅣ
TK10V60W,LVQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.38 Ω@10V, DFN 8 X 8, DTMOSⅣ
Description
General part information
TK10V60W Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.38 Ω@10V, DFN 8 x 8, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK10V60W,LVQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 9.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 20 nC |
| Input Capacitance (Ciss) (Max) | 700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 4-DFN-EP |
| Package Width | 8 mm |
| Power Dissipation (Max) | 88.3 W |
| Rds On (Max) | 380 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.7 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Electrical Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
MOSFET SPICE model grade
Selection Guide MOSFETs 2025 Rev1.0
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Simplified CFD Model Application Note
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Avalanche energy calculation
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
TK10V60W Data sheet/Japanese
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Derating of the MOSFET Safe Operating Area
Resonant Circuits and Soft Switching
TK10V60W Data sheet/English
Maximum Ratings: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Motor Control (Vacuum Cleaners)
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET Secondary Breakdown