IPW60R099CPFKSA1

NRND

INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

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IPW60R099CPFKSA1

NRND

INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 99 MOHM;

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

IPW60R099 Series

The IPW60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R099CPFKSA1

Current - Continuous Drain (Id) (Tc)	31 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	2800 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	PG-TO247-3-1
Power Dissipation (Max)	255 W
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPW60R099 Series

Part	Package Name	Mounting Type	Power Dissipation (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Grade	Qualification
INFINEON IPW60R099C6FKSA1	PG-TO247-3-1	Through Hole	278 W	99 mOhm	600 V	MOSFET (Metal Oxide)	N-Channel	10 V	-55 °C	150 °C	119 nC	37.9 A	TO-247-3	20 V	2660 pF	3.5 V
INFINEON IPW60R099P7XKSA1	PG-TO247-3	Through Hole	117 W	99 mOhm	600 V	MOSFET (Metal Oxide)	N-Channel	10 V	-55 °C	150 °C	45 nC	31 A	TO-247-3	20 V	1952 pF	4 V
INFINEON IPW60R099C7XKSA1	PG-TO247-3	Through Hole	110 W	99 mOhm	600 V	MOSFET (Metal Oxide)	N-Channel	10 V	-55 °C	150 °C	42 nC	14 A	TO-247-3	20 V	1819 pF	4 V
INFINEON IPW60R099CPFKSA1	PG-TO247-3-1	Through Hole	255 W	99 mOhm	650 V	MOSFET (Metal Oxide)	N-Channel	10 V	-55 °C	150 °C	80 nC 80 nC	31 A	TO-247-3	20 V	2800 pF	3.5 V
INFINEON IPW60R099CPAFKSA1	PG-TO247-3	Through Hole	255 W	105 mOhm	600 V	MOSFET (Metal Oxide)	N-Channel	10 V	-40 °C	150 °C	80 nC 80 nC	31 A	TO-247-3	20 V	2800 pF	3.5 V	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPW60R099CPFKSA1 | Datasheet