Specification	IPZ60R041P6FKSA1

Current - Continuous Drain (Id) (Tc)	77.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	170 nC
Input Capacitance (Ciss) (Max)	8180 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	PG-TO247-4
Power Dissipation (Max)	481 W
Rds On (Max)	41 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPZ60R Series

Part	FET Type	Technology	Package Name	Rds On (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Mounting Type	Vgs (Max)
INFINEON IPZ60R125P6FKSA1	N-Channel	MOSFET (Metal Oxide)	PG-TO247-4	99 mOhm	4.5 V	10 V	-55 °C	150 °C	3330 pF	600 V	219 W	37.9 A	TO-247-4	70 nC	Through Hole	20 V
INFINEON IPZ60R037P7XKSA1	N-Channel	MOSFET (Metal Oxide)	PG-TO247-4	37 mOhm	4 V	10 V	-55 °C	150 °C	5243 pF	650 V	255 W	76 A	TO-247-4	121 nC	Through Hole	20 V
INFINEON IPZ60R041P6FKSA1	N-Channel	MOSFET (Metal Oxide)	PG-TO247-4	41 mOhm	4.5 V	10 V	-55 °C	150 °C	8180 pF	600 V	481 W	77.5 A	TO-247-4	170 nC	Through Hole	20 V

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