MEO500-06DA

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IXYS

DIODE GEN PURP 600V 514A Y4-M6

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Active

IXYS

DIODE GEN PURP 600V 514A Y4-M6

Technical Specifications

Parameters and characteristics for this part

Specification	MEO500-06DA

Current - Average Rectified (Io)	514 A
Current - Reverse Leakage @ Vr	24 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Y4-M6
Reverse Recovery Time (trr)	300 ns
Speed	200 mA, 500 ns
Supplier Device Package	Y4-M6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.52 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Technology	Package / Case
IXYS MEO500-06DA	150 °C	-40 °C	300 ns	Chassis Mount	Y4-M6	1.52 V	600 V	200 mA 500 ns	514 A	24 mA	Standard	Y4-M6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 514A Chassis Mount Y4-M6

Technical documentation and resources