BUK9Y58-75B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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BUK9Y58-75B,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS LOGIC LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y58-75B Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y58-75B,115

Current - Continuous Drain (Id) (Tc)	20.73 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1137 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	60.4 W
Qualification	AEC-Q101
Rds On (Max)	53 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2.15 V

BUK9Y58-75B Series

N-channel TrenchMOS logic level FET

Part	Qualification	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Grade	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. BUK9Y58-75B,115	AEC-Q101	15 V	Surface Mount	75 V	10.7 nC	60.4 W	20.73 A	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	10 V	5 V	SC-100 SOT-669	1137 pF	53 mOhm	2.15 V	Automotive	N-Channel	-55 °C	175 °C