CY15B128Q-SXE is a CY15B128Q is a 128Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. This uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.