Specification	SIR608DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	51 A
Current - Continuous Drain (Id) (Tc)	208 A
Drain to Source Voltage (Vdss)	45 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	167 nC, 167 nC
Input Capacitance (Ciss) (Max)	8900 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.25 W
Rds On (Max)	1.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.3 V

SIR608 Series

Part	Vgs (Max) Negative	Vgs (Max) Positive	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Technology
Vishay Dale SIR608DP-T1-RE3	-16 V	20 V	45 V	6.25 W 104 W	10 V	4.5 V	2.3 V	PowerPAK® SO-8	-55 °C	150 °C	PowerPAK® SO-8	Surface Mount	8900 pF	167 nC 167 nC	51 A	208 A	1.2 mOhm	N-Channel	MOSFET (Metal Oxide)

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