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Description

General part information

HMC-APH196-DIE Series

The HMC-APH196 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 17 and 30 GHz. The HMC-APH196 provides 20 dB of gain at 20 GHz, and an output power of +22 dBm at 1 dB compression from a +4.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.The HMC-APH196 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC-APH196
Current - Supply400 mA
Frequency (Max)30 GHz
Frequency (Min)17 GHz
Gain20 dB
Mounting TypeSurface Mount
P1dB22 dBm
Package / CaseDie
Package NameDie
RF TypeVSAT
Test Frequency (Maximum)27 GHz
Test Frequency (Minimum)24 GHz
Voltage - Supply4.5 V

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