Specification	SISA88DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	16.2 A
Current - Continuous Drain (Id) (Tc)	40.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	25.5 nC
Input Capacitance (Ciss) (Max)	985 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	6.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SISA88 Series

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Technology	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name
Vishay Dale SISA88DN-T1-GE3	10 V	4.5 V	-55 °C	150 °C	N-Channel	Surface Mount	985 pF	-16 V	20 V	MOSFET (Metal Oxide)	30 V	PowerPAK® 1212-8	25.5 nC	40.5 A	16.2 A	2.4 V	3.2 W 19.8 W	6.7 mOhm	PowerPAK® 1212-8

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