IPP03N03LA

Obsolete

Infineon Technologies

MOSFET N-CH 25V 80A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP03N03LA

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7027 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Technology	Supplier Device Package
Infineon Technologies IPP03N03LA	20 V	-55 °C	175 ░C	4.5 V 10 V	TO-220-3	25 V	3 mOhm	7027 pF	N-Channel	150 W	57 nC	2 V	Through Hole	MOSFET (Metal Oxide)	PG-TO220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3

Technical documentation and resources