TK6Q60W,S1VQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.82 Ω@10V, IPAK, DTMOSⅣ
TK6Q60W,S1VQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.82 Ω@10V, IPAK, DTMOSⅣ
Description
General part information
TK6Q60 Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.82 Ω@10V, IPAK, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK6Q60W,S1VQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.2 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 390 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Package Name | IPAK |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 820 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.7 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Derating of the MOSFET Safe Operating Area
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
TK6Q60W Data sheet/English
Structures and Characteristics: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Calculating the Temperature of Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Avalanche energy calculation
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
MOSFET SPICE model grade
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Maximum Ratings: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Simplified CFD Model Application Note
RC Snubbers for Step-Down Converters
Motor Control (Vacuum Cleaners)
TK6Q60W Data sheet/Japanese
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Datasheet