Specification	SI3433BDV-T1-E3

Current - Continuous Drain (Id) (Ta)	4.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	18 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.1 W
Rds On (Max)	42 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	850 mV

SI3433 Series

Part	Current - Continuous Drain (Id) (Tc)	FET Type	Power Dissipation (Max)	Package / Case	Technology	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package Name	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)
Vishay Dale SI3433CDV-T1-GE3	6 A	P-Channel	1.6 W 3.3 W	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	45 nC 45 nC	-55 °C	150 °C	38 mOhm	4.5 V	1.8 V	1300 pF	8 V	6-TSOP	1 V	20 V
Vishay Dale SI3433BDV-T1-E3		P-Channel	1.1 W	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	18 nC	-55 °C	150 °C	42 mOhm	4.5 V	1.8 V		8 V	6-TSOP	850 mV	20 V	4.3 A
Vishay Dale SI3433BDV-T1-GE3		P-Channel	1.1 W	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	Surface Mount	18 nC	-55 °C	150 °C	42 mOhm	4.5 V	1.8 V		8 V	6-TSOP	850 mV	20 V	4.3 A

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