
VS-ETU1506-1-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO262-3

VS-ETU1506-1-M3
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO262-3
Description
General part information
ETU1506 Series
Diode 600 V 15A Through Hole TO-262-3
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-ETU1506-1-M3 |
|---|---|
| Current - Average Rectified (Io) | 15 A |
| Current - Reverse Leakage | 15 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | TO-262-3 |
| Reverse Recovery Time (trr) | 40 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) | 1.9 V |
Pricing
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CAD
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