PSMN020-30MLCX

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Nexperia USA Inc.

N-CHANNEL 30 V 18.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING TRENCHMOS TECHNOLOGY

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PSMN020-30MLCX

Active

Nexperia USA Inc.

N-CHANNEL 30 V 18.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING TRENCHMOS TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN020-30MLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN020-30MLCX

Current - Continuous Drain (Id) (Tc)	31.8 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9.5 nC
Input Capacitance (Ciss) (Max)	430 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK33 (5-Lead), SOT-1210
Package Name	LFPAK33
Power Dissipation (Max)	33 W
Rds On (Max)	18.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN020-30MLC Series

N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package Name	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. PSMN020-30MLCX	8-LFPAK33 (5-Lead) SOT-1210	30 V	MOSFET (Metal Oxide)	33 W	20 V	Surface Mount	10 V	4.5 V	9.5 nC	430 pF	LFPAK33	1.95 V	31.8 A	18.1 mOhm	N-Channel	-55 °C	175 °C