TPH3R506PL,LQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 94A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 94A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPH3R506PL,LQ

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	4420 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	116 W, 830 mW
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Mounting Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TPH3R506PL,LQ	N-Channel	4420 pF	2.5 V	116 W 830 mW	55 nC	8-SOP Advance (5x5)	175 °C	3.5 mOhm	8-PowerVDFN	4.5 V 10 V	20 V	MOSFET (Metal Oxide)	Surface Mount	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 94A (Tc) 830mW (Ta), 116W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources

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