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IKFW75N65EH5XKSA1

IKFW75N65EH5XKSA1

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INFINEON

THE IKFW75N65EH5 IS A 650 V, 75 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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IKFW75N65EH5XKSA1

IKFW75N65EH5XKSA1

Active
INFINEON

THE IKFW75N65EH5 IS A 650 V, 75 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247 ADVANCED ISOLATION PACKAGE

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Description

General part information

IKFW75 Series

Hard-switching 650 V, 75 ATRENCHSTOP™ 5 H5IGBT discrete in TO-247advanced isolationpackage is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and power density. This package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.

Technical Specifications

Parameters and characteristics for this part

SpecificationIKFW75N65EH5XKSA1
Current - Collector (Ic) (Max)80 A
Current - Collector Pulsed (Icm)240 A
Gate Charge144 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NamePG-HSIP247-3-2
Power - Max148 W
Reverse Recovery Time (trr)75 ns
Switching Energy (Off)600 µJ
Switching Energy (On)1.8 mJ
Td (off) @ 25°C206 ns
Td (on) @ 25°C30 ns
Test Condition Current60 A
Test Condition Resistance12 Ohm
Test Condition Voltage400 V
Test Condition Voltage (Secondary)15 V
Vce(on) (Max)2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

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