CFRC307-G

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Comchip Technology

DIODE GEN PURP 1KV 3A DO214AB

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Comchip Technology

DIODE GEN PURP 1KV 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	CFRC307-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

DIODE GEN PURP 1KV 3A DO214AB

Part	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Mounting Type	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)
Comchip Technology CFRC307-G	5 µA	200 mA, 500 ns	DO-214AB (SMC)	1000 V	150 °C	Surface Mount	3 A	Standard	1.3 V	DO-214AB, SMC	500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available