FD-DF80R12W1H3_B52

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Infineon Technologies

IGBT MOD 1200V 40A 215W

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Infineon Technologies

IGBT MOD 1200V 40A 215W

Technical Specifications

Parameters and characteristics for this part

Specification	FD-DF80R12W1H3_B52

Configuration	Single
Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	235 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	215 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Configuration	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Input Capacitance (Cies) @ Vce	Power - Max [Max]	NTC Thermistor	Mounting Type	Input	IGBT Type
Infineon Technologies FD-DF80R12W1H3_B52	Module	1 mA	1200 V	125 °C	-40 °C	2.4 V	Single	Module	40 A	235 nF	215 W		Chassis Mount	Standard	Trench Field Stop

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Field Stop Single 1200 V 40 A 215 W Chassis Mount Module

Technical documentation and resources