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STP40N65M2

STP40N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.087 OHM TYP., 32 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

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STP40N65M2

STP40N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 0.087 OHM TYP., 32 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE

Find alt

Description

General part information

STP40N65M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP40N65M2
Current - Continuous Drain (Id) (Tc)32 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56.5 nC
Input Capacitance (Ciss) (Max)2355 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)250 W
Rds On (Max)99 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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