AOB160A60L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO263

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Active

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 24A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB160A60L

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

MOSFET N-CH 600V 24A TO263

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOB160A60L	-55 °C	150 °C	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	2340 pF	20 V	24 A	Surface Mount	TO-263 (D2PAK)	N-Channel	160 mOhm	600 V	250 W	3.6 V	MOSFET (Metal Oxide)	46 nC	10 V

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General part information

N-Channel 600 V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources