XP202A0003MR-G

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Torex Semiconductor Ltd

MOSFET P-CH 30V 3A SOT23

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Torex Semiconductor Ltd

MOSFET P-CH 30V 3A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	XP202A0003MR-G

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	435 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

MOSFET P-CH 30V 3A SOT23

Part	Power Dissipation (Max) [Max]	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Technology
Torex Semiconductor Ltd XP202A0003MR-G	1 W	Surface Mount	P-Channel	2.6 V	150 °C	435 pF	20 V	SOT-23	10 nC	45 mOhm	SC-59, SOT-23-3, TO-236-3	4 V	10 V	30 V	MOSFET (Metal Oxide)

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General part information

P-Channel 30 V 5A (Tj) 1W Surface Mount SOT-23

Technical documentation and resources