UPS160/TR7

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Microchip Technology

DIODE SCHOTTKY 1.0A, 60V, VF=0.60V POWERMITE T/R

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Microchip Technology

DIODE SCHOTTKY 1.0A, 60V, VF=0.60V POWERMITE T/R

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	UPS160/TR7	UPS160 Series

Capacitance @ Vr, F	55 pF	55 pF
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	100 µA	100 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	125 °C	125 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	DO-216AA	DO-216AA
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	Powermite	Powermite
Technology	Schottky	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V	60 V
Voltage - Forward (Vf) (Max) @ If	600 mV	600 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Diode Schottky 1.0A, 60V, VF=0.60V PowerMite T/R

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Capacitance @ Vr, F	Supplier Device Package	Current - Average Rectified (Io)	Package / Case
Microchip Technology UPS160/TR13	100 µA	-55 °C	125 °C	200 mA, 500 ns	60 V	Schottky	600 mV	Surface Mount	55 pF	Powermite	1 A	DO-216AA
Microchip Technology UPS160E3/TR13	100 µA	-55 °C	125 °C	200 mA, 500 ns	60 V	Schottky	600 mV	Surface Mount	55 pF	Powermite	1 A	DO-216AA
Microchip Technology UPS160/TR7	100 µA	-55 °C	125 °C	200 mA, 500 ns	60 V	Schottky	600 mV	Surface Mount	55 pF	Powermite	1 A	DO-216AA

General part information

Low profile package height. Low thermal resistance

Technical documentation and resources

No documents available