TK31N60W5,S1VF

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO247

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	TK31N60W5,S1VF

Current - Continuous Drain (Id) @ 25°C	30.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature	FET Type	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK31N60W,S1VF	150 °C	N-Channel	Through Hole	30 V	30.8 A	10 V	MOSFET (Metal Oxide)	TO-247-3	88 mOhm	3.7 V	3000 pF	86 nC	600 V	230 W	TO-247
Toshiba Semiconductor and Storage TK31N60W5,S1VF	150 °C	N-Channel	Through Hole	30 V	30.8 A	10 V	MOSFET (Metal Oxide)	TO-247-3	99 mOhm	4.5 V	3000 pF		600 V	230 W	TO-247	105 nC

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General part information

N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-247

Technical documentation and resources