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2STX1360-AP

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STMicroelectronics

POWER BIPOLAR TRANSISTORS

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2STX1360-AP

Active
STMicroelectronics

POWER BIPOLAR TRANSISTORS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification2STX1360-AP2STX Series
--
Current - Collector (Ic) (Max) [Max]3 A3 A
Current - Collector Cutoff (Max) [Max]100 nA100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160160
Frequency - Transition130 MHz130 MHz
Mounting TypeThrough HoleThrough Hole
Operating Temperature150 °C150 °C
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3
Power - Max [Max]1 W1 W
Supplier Device PackageTO-92APTO-92AP, TO-92-3
Transistor TypeNPNNPN
Vce Saturation (Max) @ Ib, Ic500 mV500 mV
Voltage - Collector Emitter Breakdown (Max)60 V60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

2STX Series

POWER BIPOLAR TRANSISTORS

PartPower - Max [Max]Current - Collector Cutoff (Max) [Max]Current - Collector (Ic) (Max) [Max]Frequency - TransitionTransistor TypeVoltage - Collector Emitter Breakdown (Max)DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Package / CaseMounting TypeVce Saturation (Max) @ Ib, IcOperating TemperatureSupplier Device Package
STMicroelectronics
2STX1360-AP
STMicroelectronics
2STX1360-AP
1 W
100 nA
3 A
130 MHz
NPN
60 V
160
TO-226-3, TO-92-3
Through Hole
500 mV
150 °C
TO-92AP
STMicroelectronics
2STX1360
1 W
100 nA
3 A
130 MHz
NPN
60 V
160
TO-226-3, TO-92-3
Through Hole
500 mV
150 °C
TO-92-3

Description

General part information

2STX Series

The devices are NPN transistors manufactured using new PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage."Very low collector-emitter saturation voltageHigh current gain characteristicFast-switching speed

Documents

Technical documentation and resources