IXFH30N60X

Obsolete

IXYS

MOSFET N-CH 600V 30A TO247

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Obsolete

IXYS

MOSFET N-CH 600V 30A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH30N60X

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
IXYS IXFH30N50	4 V	30 A	10 V	TO-247AD (IXFH)	160 mOhm	N-Channel	20 V	-55 °C	150 °C	360 W	Through Hole	5700 pF	500 V	TO-247-3	MOSFET (Metal Oxide)	300 nC
IXYS IXFH30N40Q	4 V	30 A	10 V	TO-247AD (IXFH)	160 mOhm	N-Channel	20 V	-55 °C	150 °C		Through Hole	3300 pF	400 V	TO-247-3	MOSFET (Metal Oxide)		300 W	95 nC
IXYS IXFH30N60X		30 A	10 V	TO-247	155 mOhm	N-Channel	30 V	-55 °C	150 °C	500 W	Through Hole	2270 pF	600 V	TO-247-3	MOSFET (Metal Oxide)			56 nC	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 30A (Tc) 500W (Tc) Through Hole TO-247

Technical documentation and resources

No documents available